Method for laser adjustable thin film capacitors

ABSTRACT

Disclosed are apparatus and methodology for providing a precision laser adjustable (e.g., trimmable) thin film capacitor array. A plurality of individual capacitors are formed on a common substrate and connected together in parallel by way of fusible links. The individual capacitors are provided as laddered capacitance value capacitors such that a plurality of lower valued capacitors corresponding to the lower steps of the ladder, and lesser numbers of capacitors, including a single capacitor, for successive steps of the ladder, are provided. Precision capacitance values can be achieved by either of fusing or ablating selected of the fusible links so as to remove the selected subcomponents from the parallel connection. In-situ live-trimming of selected fusible links may be performed after placement of the capacitor array on a hosting printed circuit board.

PRIORITY CLAIM

This application claims the benefit of previously filed U.S. ProvisionalPatent Application entitled “PRECISION LASER ADJUSTABLE THIN FILMCAPACITORS,” assigned U.S. Ser. No. 60/927095, filed May 1, 2007, andwhich is incorporated herein by reference for all purposes.

FIELD OF THE INVENTION

The present subject matter relates to apparatuses and methodologies forproviding post production adjustable capacitors. More specifically, thepresent subject matter relates to thin film capacitors that are designedto be adjusted (such as by trimming) by the manufacturer or customer soas to provide precision capacitive values for incorporation such as intovalue critical circuitry.

BACKGROUND OF THE INVENTION

The use of discrete electrical components in modern day electronicdevices remains an issue in many fields despite the advances inmicroelectonics and integrated circuit design. The necessity to providediscrete components may be driven by a number of factors. One suchfactor may be based on component electrical value while physical sizeconsiderations may also be of significance.

In the instance that a customer wishes to manufacture an electrical orelectronic system or device requiring the use of capacitor components,such components may take on various roles and, consequently, may requirewidely varying physical and electrical properties. In some instances,large value capacitors with respect to either capacitive values and/orvoltage handling capabilities may be of such physical size as toprohibit direct incorporation of the component into an electronicdevice. Such may especially be true in the instance of microelectronicor integrated circuit devices.

In other instances, while a particular subject capacitive component maybe manufactured so as to be of a physical size sufficiently small to beincorporated into smaller electronic devices (including theaforementioned microelectronic and integrated circuit devices), theremay be additional impediments to such incorporation. For example, onesuch reason may involve the need to vary the electrical values of thecomponent in relation to the device or operating conditions with whichor under which the component is employed.

High density mounting of electronic components on circuit boards iscommon in the electronics industry. Miniature ceramic capacitors havingmultiple layers have been used for some time in electronic devices suchas cellular telephones, network routers, computers, and the like. Themanufacturing techniques of such devices must be precise to provide forthe greatly reduced size of such devices, while still affordingdesirable electrical operating characteristics.

Various United States Patents are directed to aspects of electroniccomponent manufacturing. See, for example, U.S. Pat. No. 6,577,491 toOhtsuka et al.; U.S. Pat. No. 6,515,842 to Hayworth, et al; U.S. Pat.No. 6,243,253 and 5,880,925 to DuPre et al.; U.S. Pat. No. 5,590,016 toFujishiro et al.; U.S. Pat. No. 5,565,838 to Chan; U.S. Pat. No.5,548,474 to Chen at al.; U.S. Pat. No. 5,367,430 to DeVoe et al.; U.S.Pat. No. 5,159,300 to Nakamura et al.; U.S. Pat. No. 4,947,286 to Kanekoet al.; U.S. Pat. No. 4,574,438 to Diepers, et al.; U.S. Pat. No.3,635,759 to Howatt; U.S. Pat. No. 3,617,834 to Rayburn; U.S. Pat. No.3,538,571 to Callahan et al.; and U.S. Pat. No. 3,117,365 to Belko, Jr.The above referenced patents are for all purposes hereby incorporated byreference into this disclosure as if fully set forth herein.

For some time, the design of various electronic components has beendriven by a general industry trend toward miniaturization. In suchregard, a need generally exists for smaller electronic components havingexceptional operating characteristics. For example, some applicationsrequire a large capacitance value, but are severely limited in theamount of space (often referenced as “real estate”) such a capacitor mayoccupy on a circuit board.

Multi-layer ceramic devices, sometimes referred to as “multi-layerceramic capacitors” or “MLCC's,” are often constructed with a pluralityof alternating ceramic and electrode layers arranged in a stack. Duringmanufacture, such layers may be pressed and formed into a verticallystacked structure. Such MLCC′s may have a single capacitor on a chip, ormay include several capacitors in an array. However, such capacitorstypically have one pre-set capacitance value that cannot later bealtered.

With the desire to increase functionality and reduce the size of suchcomponents, manufacturers are looking for new ways to provide varying(i.e., multiple) capacitance values in microcircuits. However, as thesize of capacitors decreases, the dead space or spacing that must existbetween capacitors when mounted on a circuit board becomes relativelymore important as a limiting factor in miniaturizing a design.

More recently, manufacturers have sought ways to reduce the size ofcapacitor arrays while simultaneously also increasing the flexibility ofsuch capacitor arrays. In the context of the present disclosure, theterm capacitor array is meant to describe a unit comprised of multiplecapacitors. A significant limitation of current designs is that manycurrently known arrayed capacitors, once installed and constructed inthe chip, are not variable as to its value (i.e., the degree to which Itcan hold a charge).

A capacitor array having capacitors of various values within a singlechip would be highly desirable. Thus, a capacitor array design providingboard manufacturers and assemblers more flexibility by affordingmultiple capacitance values on a single chip would be desirable.

While various implementations of multiple capacitance devices andcapacitor array devices have been developed, no design has emerged thatgenerally encompasses all of the desired characteristics as hereafterpresented in accordance with the subject technology.

SUMMARY OF THE INVENTION

In view of the recognized features encountered in the prior art andaddressed by the present subject matter, an improved thin-film capacitorstructure has been provided. More particularly, a precision laseradjustable (for example, trimmable) thin film capacitor structure hasbeen provided wherein the capacitance value may be readily adjustedafter manufacture.

In an exemplary configuration, an adjustable, thin film capacitorstructure is provided with a base value capacitor and plural parallelcoupled capacitors configured such that one or more of the parallelcoupled capacitors may be effectively removed from such parallelconnection.

In one of the simpler present forms, adjustable thin film capacitors areprovided with plural parallel connected capacitors coupled to each otherby way of fusible links.

Another positive aspect of such present types of devices is that suchfusible links coupling the plurality of capacitors in parallel may be“fused” by way of laser irradiation.

In accordance with aspects of certain embodiments of the present subjectmatter, methodologies are provided to adjust capacitive values of thepresent adjustable thin film capacitors following manufacture includingfollowing mounting on a circuit board.

In accordance with certain aspects of other embodiments of the presentsubject matter, methodologies have been developed to live-trim (i.e.,trim while in operation in a circuit) an adjustable thin film capacitorto very close tolerances. It is to be understood that in the presentcontext, the use of the terminology “close tolerances” does notnecessarily mean that an exact target value is known, but instead morebroadly encompasses adjusting the capacitor to a relatively finely-tunedvalue so as to correspondingly provide fine-tuning of an associated livecircuit.

In accordance with yet additional aspects of further embodiments of thepresent subject matter, apparatuses and accompanying methodologies havebeen developed to provide in-situ laser trimming of ladder arrayconfigured capacitors to provide very close tolerances while avoidingrearrangements or reconfiguration of hosting printed circuit boards.

It is to be understood that various aspects of embodiments of thepresent subject matter relate to apparatuses while other aspects thereofequally relate to either or both of accompanying or correspondingmethodologies.

One exemplary present embodiment relates to an adjustable thin filmcapacitor, adapted for adjusting the resulting capacitance value thereofwhile such capacitor is in operation in a circuit, comprising respectivefirst and second terminals; and a capacitor array, situated electricallybetween such respective first and second terminals, such capacitor arraycomprising a plurality of respectively valued sub-component capacitors,arranged so that respective of such sub-component capacitors may beremoved from the resulting capacitance value of such adjustable thinfilm capacitor.

In certain of the foregoing embodiments, such sub-component capacitorsmay comprise a base value capacitor and plural parallel coupledcapacitors configured such that one or more of the parallel coupledcapacitors may be effectively removed from such parallel connection,whereby the resulting capacitance value of such thin film capacitor maybe adjusted.

Still further, in certain present embodiments, such plural parallelcoupled capacitors may be preferably coupled by way of fusible links,configured in a capacitive laddering effect, so that selected removal ofrespective such parallel coupled capacitors correspondingly adjusts theresulting capacitance value of such thin film capacitor.

Yet further, such exemplary fusible links for coupling the plurality ofcapacitors in parallel may be respectively ablated by laser irradiation;and such thin film capacitor may further include a laser radiationtransparent passivation layer covering at least such fusible links,whereby such resulting capacitance value of such thin film capacitor maybe adjusted while such thin film capacitor is in an intended useenvironment. Such fusible links preferably are situated such that noelectrode of a respective sub-component capacitor lies either above orbelow a respective fusible link, so that subsequent ablation of anyfusible link does not create potential shorts or leakages.

In yet another alternative present exemplary embodiment, an in-situadjustable thin film capacitor, adapted for post production adjustmentof the resulting capacitance value thereof, may comprise respectivefirst and second terminals; and a capacitor array, situated electricallybetween such respective first and second terminals, such capacitor arraycomprising a base value capacitor and plural parallel coupled capacitorscoupled with at least one of such terminals by way of fusible links, andconfigured in a capacitive laddering effect, so that selected removal ofrespective such fusible links correspondingly removes parallel coupledcapacitors so as to adjust the resulting capacitance value of such thinfilm capacitor. In such embodiment, preferably such fusible links aresituated such that no electrode of a respective capacitor of suchcapacitor array lies either above or below a respective fusible link, sothat subsequent disruption of electrical connection of any fusible linkdoes not create potential shorts or leakages; and such capacitiveladdering configuration preferably includes at least one respectivesingle capacitor of relatively larger capacitive value and a pluralityof substantially duplicative capacitors of at least two relatively lowercapacitive values. In other present exemplary embodiments of theforegoing exemplary arrangement, such capacitive laddering configurationmay include at least two respective single capacitors having capacitivevalues respectively of at least 1.0 pF; and such plurality ofsubstantially duplicative capacitors may include at least ten of suchcapacitors having capacitive values of respectively no more than 0.5 pF.

In yet another present exemplary alternative embodiment, a capacitorarray may be configured for post production in-situ laser trimmable use,for adjustment of the resulting capacitance value thereof while suchcapacitor array is in operation in a circuit. In such embodiment,preferably such array may comprise a substrate; a first metallizationlayer formed on such substrate and having a first portion thereofproviding a respective connection portion for a first terminal andproviding a plurality of common electrode areas, and having a secondportion thereof providing a respective connection portion for a secondterminal; a dielectric layer formed on such first metallization layerand having respective first and second windows formed therein andaligned for respective association with such first and second terminalconnection portions of such first metallization layer; a secondmetallization layer formed on such dielectric layer and havingrespective first and second terminal connection portions thereof alignedwith corresponding such portions of such first metallization layer, andhaving a plurality of second electrode layers for correspondence withselected portions of such common electrode areas of such firstmetallization layer, and having a respective plurality of fusible linksassociated respectively with such second electrode layers for fusiblyconnecting such second electrode layers with a selected one of suchfirst and second terminal connections portions of such secondmetallization layer; a passivation layer formed over such secondmetallization layer and having respective first and second windowsformed therein and aligned for respective association with such firstand second terminal connection portions of such second metallizationlayer; and termination plating received in such first and second windowsof such passivation layer and interconnected with such firstmetallization layer via such respective windows of such dielectric layerand of such passivation layer, and via such respective first and secondterminal connection portions of such second metallization layer. In suchexemplary arrangement, preferably such passivation layer is transparentto laser radiation, and such fusible links may be respectively ablatedby laser irradiation, whereby the resulting capacitance value of suchcapacitor array may be adjusted with laser ablation through suchpassivation layer of selected fusible links while such capacitor arrayis operative in a circuit, for precise trimming of such capacitor arraycapacitance value,

It is to be further understood that the present subject matter equallyrelates to corresponding methodology. For example, one present exemplaryembodiment relates to a method of adjusting the resulting capacitancevalue of a thin film capacitor while such capacitor is in operation in acircuit. Such exemplary method may include providing a capacitor havingrespective first and second terminals; providing a capacitor array,situated electrically between such respective first and secondterminals, such capacitor array comprising a plurality of respectivelyvalued sub-component capacitors, arranged so that respective of suchsub-component capacitors may be removed from the resulting capacitancevalue of such adjustable thin film capacitor; and adjusting theresulting capacitance value of such thin film capacitor by respectivelyremoving therefrom selected of such respectively valued sub-componentcapacitors.

Alternatives of the foregoing exemplary methodology may further includeproviding such sub-component capacitors as a base value capacitor andplural parallel coupled capacitors configured such that one or more ofthe parallel coupled capacitors may be effectively removed from suchparallel connection; and such adjusting step includes adjusting theresulting capacitance value of such thin film capacitor by selectivelyremoving one or more of such parallel coupled capacitors from suchparallel connection thereof.

In exemplary of such embodiments, such plural parallel coupledcapacitors may be coupled by way of fusible links, configured in acapacitive laddering effect; and such adjusting step may includeselectively removing respective such parallel coupled capacitors bydisrupting theft corresponding fusible links, so as to correspondinglyadjust the resulting capacitance value of such thin film capacitor.

it certain of the foregoing embodiments, such fusible links provided forcoupling the plurality of capacitors in parallel may be respectivelyablated by laser irradiation; and such methodology may alternativelyfurther include covering at least such fusible links with a laserradiation transparent passivation layer, whereby such resultingcapacitance value of such thin film capacitor may be adjusted via lasertrimming of such laser-ablative fusible links while such thin filmcapacitor is in an intended use environment.

In still further alternatives of the foregoing exemplary methods, suchcapacitive laddering configuration may include at least two respectivesingle capacitors having capacitive values respectively of at least 1.0pF; and such plurality of substantially duplicative capacitors mayinclude at least ten of such capacitors having capacitive values ofrespectively no more than 0.5 pF.

In another present alternative exemplary methodology, the presentsubject matter may relate to a method of making a capacitor arrayconfigured for post production in-situ laser trimmable use, foradjustment of the resulting capacitance value thereof while suchcapacitor array is in operation in a circuit, such method comprisingproviding a substrate; forming a first metallization layer on suchsubstrate and having a first portion thereof providing a respectiveconnection portion for a first terminal and providing a plurality ofcommon electrode areas, and having a second portion thereof providing arespective connection portion for a second terminal; forming adielectric layer on such first metallization layer and having respectivefirst and second windows formed therein and aligned for respectiveassociation with such first and second terminal connection portions ofsuch first metallization layer; forming a second metallization layer onsuch dielectric layer and having respective first and second terminalconnection portions thereof aligned with corresponding such portions ofsuch first metallization layer, and having a plurality of secondelectrode layers for correspondence with selected portions of suchcommon electrode areas of such first metallization layer, and having arespective plurality of fusible links which are respectively ablatableby laser irradiation and associated respectively with such secondelectrode layers for fusibly connecting such second electrode layerswith a selected one of such first and second terminal connectionsportions of such second metallization layer; forming a laser radiationtransparent passivation layer over such second metallization layer andhaving respective first and second windows formed therein and alignedfor respective association with such first and second terminalconnection portions of such second metallization layer; and providingtermination plating received in such first and second windows of suchpassivation layer and interconnected with such first metallization layervia such respective windows of such dielectric layer and of suchpassivation layer, and via such respective first and second terminalconnection portions of such second metallization layer; and adjustingthe resulting capacitance value of such capacitor array with laserablation through such passivation layer of selected fusible links whilesuch capacitor array is operative in a circuit, for precise trimming ofsuch capacitor array capacitance value.

In the foregoing alternative exemplary methodology, additionalalternatives may be practiced so that such plurality of second electrodelayers of such second metallization layer, such corresponding selectedportions of such common electrode areas of such first metallizationlayer, and such dielectric layer situated therebetween, formrespectively valued sub-component capacitors, arranged so thatrespective of such sub-component capacitors may be removed from theresulting capacitance value of such capacitor array upon ablation of itsrespective fusible link. In yet other alternative embodiments, suchsub-component capacitors may comprise a base value capacitor and pluralparallel coupled capacitors configured in a capacitive laddering effect,such that one or more of the parallel coupled capacitors may beeffectively removed from such parallel connection. Further, such fusiblelinks may be situated such that no electrode of a respectivesub-component capacitor lies either above or below a respective fusiblelink, so that subsequent ablation of any fusible link does not createpotential shorts or leakages.

In some alternatives of the foregoing, such capacitive ladderingconfiguration may include at least one respective single capacitor ofrelatively larger capacitive value and a plurality of substantiallyduplicative capacitors of at least two relatively lower capacitivevalues. In other present alternative of the foregoing, such capacitiveladdering configuration may include at least two respective singlecapacitors having capacitive values respectively of at least 1.0 pF; andsuch plurality of substantially duplicative capacitors may include atleast ten of such capacitors having capacitive values of respectively nomore than 0.5 pF.

Additional objects and advantages of the present subject matter are setforth in, or will be apparent to, those of ordinary skill in the artfrom the detailed description herein. Also, it should be furtherappreciated that modifications and variations to the specificallyillustrated, referred and discussed features, elements, and steps hereofmay be practiced in various embodiments and uses of the present subjectmatter without departing from the spirit and scope of the subjectmatter. Variations may include, but are not limited to, substitution ofequivalent means, features, or steps for those illustrated, referenced,or discussed, and the functional, operational, or positional reversal ofvarious parts, features, steps, or the like.

Still further, it is to be understood that different embodiments, aswell as different presently preferred embodiments, of the presentsubject matter may include various combinations or configurations ofpresently disclosed features, steps, or elements, or their equivalents(including combinations of features, parts, or steps or configurationsthereof not expressly shown in the figures or stated in the detaileddescription of such figures). Additional embodiments of the presentsubject matter, not necessarily expressed in the summarized section, mayinclude and incorporate various combinations of aspects of features,components, or steps referenced in the summarized objects above, and/orother features, components, or steps as otherwise discussed in thisapplication. Those of ordinary skill in the art will better appreciatethe features and aspects of such embodiments, and others, upon review ofthe remainder of the specification.

BRIEF DESCRIPTION OF THE DRAWINGS

A full and enabling disclosure of the present subject matter, includingthe best mode thereof, directed to one of ordinary skill in the art, isset forth in the specification, which makes reference to the appendedfigures, in which:

FIG. 1 is a top planar view of an exemplary capacitor array constructedin accordance with the present technology illustrated with a typicalpassivation layer removed;

FIG. 2 is a cross-section of the exemplary capacitor array of FIG. 1,taken alone line 2-2 thereof;

FIGS. 3a through 3e illustrate respective, sequential steps forconstruction of an exemplary capacitor array in accordance withexemplary methodology of the present technology;

FIG. 4a illustrates an exemplary completed capacitor array but with thepassivation layer omitted for clarity of the present view, constructedin accordance with the present technology, and providing an exemplaryinitial capacitance value of 61 pF; and

FIG. 4b illustrates a capacitor array corresponding to the array of FIG.4a following laser trimming per present methodology to reduce thecapacitance value thereof for example to 40.96 pF.

Repeat use of reference characters throughout the present specificationand appended drawings is intended to represent same or analogousfeatures, elements, or steps of the present subject matter.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As discussed in the Summary of the Invention section, the presentsubject matter is particularly concerned with a precision laseradjustable thin film capacitor structures and/or related methodologies.

Selected combinations of aspects of the disclosed technology correspondto a plurality of different embodiments of the present subject matter.It should be noted that each of the exemplary embodiments presented anddiscussed herein should not insinuate limitations of the present subjectmatter. Features or steps illustrated or described as part of oneembodiment may be used in combination with aspects of another embodimentto yield yet further embodiments. Additionally, certain features may beinterchanged with similar devices, features, or steps not expresslymentioned which perform the same or similar function or functions.

Reference will now be made in detail to various exemplary presentlypreferred embodiments of the subject precision laser adjustable thinfilm capacitor. Referring now to the drawings, FIG. 1 illustrates a topplanar view of an exemplary precision laser trimmable thin filmcapacitor array 100 constructed in accordance with the presenttechnology, and illustrated with a typically or normally employedpassivation layer removed for clarity of illustration.

As shown in such FIG. 1, present capacitor array 100 includes a firstpole or terminal 102 and a second pole or terminal 104 between which anumber of variously sized sub-component capacitors are in accordancewith present subject matter connected in parallel. The capacitive valuesof the sub-component capacitors are preferably chosen such that acapacitive laddering effect is achieved. In such manner, severalsubstantially duplicative capacitors of one or more lower capacitivevalues within the ladder may be provided. At the same time, singlecapacitors of several relatively larger capacitive values may beincluded in the capacitor array 100. It is possible, of course, toprovide more than one of each of such exemplary higher valuedcapacitors, and all such options and alternatives are fully contemplatedand intended to be included within the scope of the present disclosure.

In an exemplary configuration, a relatively large number of therelatively smaller capacitive valued sub-components may be provided. Inthe exemplary configuration of FIG. 1, for example, twenty-one firstvalue capacitors 110 may be included in the capacitor array 100. In anexemplary configuration, such first valued capacitors may correspond toa 0.02 pF capacitor. In like manner, a large number of second valuecapacitors 112 may be provided. In an exemplary embodiment, second valuecapacitors 112 may correspond to 0.20 pF capacitors and fourteen suchcapacitors may be provided within capacitor array 100. Of course,alternative capacitive values and numbers of included sub-componentcapacitors may be employed, as will be fully understood by those ofordinary skill in the art from the complete disclosure herewith.

With further reference to FIG. 1, it will be noticed that larger valuedcapacitors may be included in capacitor array 100 for example as singleentities. For example, third value capacitor 114 may correspond to a 1.0pF capacitor, fourth value capacitor 116 may correspond to a 2.0 pFcapacitor, fifth value capacitor 118 may correspond to a 4 pF capacitor,sixth value capacitor 120 may correspond to a 6 pF capacitor, seventhvalue capacitor 122 may correspond to a 8 pF capacitor, eighth valuecapacitor 124 may correspond to a 16 pF capacitor, and ninth valuecapacitor 126 may correspond to a 24 pF capacitor. It should beappreciated that plural capacitors corresponding to various thirdthrough ninth valued capacitors may be provided, and all variationsthereto are intended as included within the scope of the presentdisclosure. For example, ninth value capacitor 126 mentioned above ascorresponding to a 24 pF capacitor may be subdivided into two capacitorsof 12 pF each. Similar such divisions are possible with other capacitorsof the capacitor array 100. Alternatively, selected of the illustratedcapacitors may be subdivided in addition to or alternatively toproviding plural higher valued subcomponent capacitors.

Further with reference to FIG. 1, it should be noticed and understoodthat per the present subject matter each of the sub-component capacitorsare coupled to terminal 104 by way of a fusible element. In the contextof the present disclosure, the term “fusible element” is intended todescribe a conductive element whose conductive path may be disrupted orbroken by application of energy of such type and of such level so as toeither melt or ablate away a portion of the element. Such fusibleelements are more clearly seen in FIGS. 4a and 4b , as will be describedin greater detail hereinbelow. One present point of interest here,however, is the relative position of the fusible elements (which willalso be more thoroughly described below). It should be noted, however,that each of the fusible elements is located such that, for example,laser ablation of the fusible elements does not compromise any portionof the subcomponent capacitors. Such is made possible per the presenttechnology by locating the fusible elements so that no portion of therespective subcomponents opposite electrode lie either above or belowthe respective fusible elements, so that subsequent ablation does notcreate potential shorts or leakage zones.

With reference now to FIG. 2, there is illustrated a cross-section ofcapacitor array 100 taken along section line 2-2 of FIG. 1. As may beobserved from FIG. 2, exemplary capacitor array 100 may be constructedin layered fashion, which is more fully described hereinbelow withreference to FIGS. 3a through 3e . Preliminarily, however, it will beseen that such exemplary capacitor 100 is formed preferably startingwith a substrate 200, over which is formed a representative firstcapacitor electrode 202. Such exemplary first capacitor electrode 202may be covered with a dielectric layer 204, over which is formed arepresentative second capacitor electrode 206, a conductor 208, and arepresentative fusible link 210. The relationships of capacitorelectrode 206, conductor 208, and fusible link 210 will be more fullydescribed with reference to FIGS. 4a and 4b hereinbelow. Finally, perpresent subject matter, a passivation layer 212 covers the top portionof capacitor array 100, including capacitor electrode 206, conductor208, fusible link 210 and otherwise exposed areas of dielectric material204.

With reference to FIGS. 3a through 3e , there are representativelyillustrated respective, sequential steps for construction of anexemplary capacitor array in accordance with the present technology. Asmay be seen in such FIG. 3a , a substrate 200 is provided on which ispreferably formed a first metallization layer 300. Metallization layer300 is generally formed as two portions, including a designated firstportion 302. Such designated first portion 302 is generally U-shaped andcorresponds in part to a connection portion 306 for first terminal 102(FIG. 1) and common electrode areas 308 a, 308 b, 308 c, 308 d for thesubcomponent capacitors. The designated second portion 304 ofmetallization layer 300 corresponds to a connection portion for secondterminal 104 (FIG. 1).

FIG. 3b illustrates placement of a present exemplary dielectric layer310 over representative metallization layer 300 of FIG. 3a . Windows312, 314 are provided in dielectric layer 300 for subsequent terminationof an exemplary completed capacitor array.

FIG. 3c illustrates placement of an exemplary second metallization layer400 over dielectric layer 310 (FIG. 3b ). Second metallization layer 400corresponds to further termination layers 402, 404; representativesecond electrode layers 406, 408, 410; representative fusible (orablatable) links 420, 422, 424; and representative connecting conductors430, 432, 434. As previously discussed, each of the individuallyprovided subcomponent capacitors of capacitor array 100 (FIGS. 1, 2, and41) have an electrode portion, representatively illustrated at 406, 408,410, coupled by way of fusible (or ablatable) links, representativelyillustrated at 420, 422, 424, to a terminal of capacitor array 100(FIGS. 1, 2, and 41), as represented by metallization portions 304, 402and exemplary copper termination plating 450 (see also present FIG. 4e).

FIG. 3d illustrates placement of previously mentioned exemplarypassivation layer 212 (see also FIG. 2) over exemplary secondmetallization layer 400. Windows 440, 442 are provided as examples forpermitting contact with first metallization layer 300 by way of portions402, 404 of second metallization layer 400 and windows 312, 314.

Finally, exemplary FIG. 3e illustrates copper (Cu) termination plating450, 452 though windows 440, 442 of exemplary passivation layer 212 ofthe exemplary completed capacitor array.

With reference to FIG. 4a , there is illustrated an exemplary completedcapacitor array 100 but with the passivation layer omitted for clarity.Otherwise, such exemplary array 100 is constructed in accordance withthe present technology, and so as to provide an exemplary initialcapacitance value of 61 pF. FIG. 4a is substantially identical to FIGS.1 and 3 c, the descriptions of which may be further reviewed foradditional reference character descriptions. With specific reference toFIG. 4a , it will be noticed that an exemplary capacitor array 100 hasbeen illustrated wherein all of the fusible (or ablatable) links,representatively illustrated at 502, 594, 596, 508, 510 and 512, remainintact. Under such condition, exemplary capacitor array 100 as presentlyrepresentatively illustrated, may provide an initial capacitive value of61 pF. It should be appreciated, of course, that capacitor array 100 maybe configured as understood by those of ordinary skill in the art, so asto provide virtually any initial capacitive value, as desired by eithera manufacturer or user. Thus, the present exemplary specific initialcapacitive value is not to be considered in any way as a limitation ofthe present subject matter.

With reference now to FIG. 4b , it will be observed and understood perthe present subject matter that fusible (or ablatable) links previouslyin areas 510′, 512′ and 508′ have been removed by laser trimming (e.g.,ablation) so that the capacitance value of capacitive array 100 has beenreduced by electrically removing or disconnecting several of thepreviously parallel connected subcomponent capacitors from the exemplarycapacitive array 100. With brief reference back to the description ofFIG. 1, it will be remembered that the subcomponent capacitor nowdisconnected from the array by trimming of the fusible link at 510′ was,in the example given, assigned a capacitive value of 16 pF. Similarly,the subcomponent capacitor now electrically removed by ablation of thefusible link at 512′ was exemplarily designated as a 4 pF capacitor.Further, with respect to the subcomponent capacitors now removed byablation of two fusible links in the area at 508′, such capacitors wereexemplarily designated as 0.02 pF capacitors. Thus, in the presentexemplary configuration of the present subject matter, and starting withan initial capacitive value of 61 pF, the trimmed capacitive value perpresent practices, corresponds to 61 pF minus 16 pF minus 4 pF minus2(0.02 pF)=40.96 pF.

A significant feature of the present subject matter resides in theprovision of a capacitive array that may be trimmed in-situ under liveoperating conditions. Thus, a laser radiation transparent passivationlayer may advantageously be applied to permit trimming even afterplacement of the array in a host environment. In such context, thetrimming of a capacitor in-vivo (or in-situ) may in some instances notbe for the purpose of adjusting such component to a specific, previouslyknown target value, but for the purpose of adjusting it so as tooptimize the associated circuit performance. For example, a precisevalue may be not be known or even of concern, but even with the buildupof other parasitics in the circuit, the system can be fine-tuned byaltering this one component. In one exemplary present embodiment, acustomer or user may, for example, install the capacitor with anintentionally high value, then monitor the frequency of the circuit, andcut out capacitance until the exact frequency is generated.

While the present subject matter has been described in detail withrespect to specific embodiments thereof, it will be appreciated thatthose skilled in the art, upon attaining an understanding of theforegoing and the referenced figures, may readily produce alterationsto, variations of, and equivalents to such embodiments. Accordingly, thescope of the present disclosure is by way of example rather than by wayof limitation, and the subject disclosure does not preclude inclusion ofsuch modifications, variations and/or additions to the present subjectmatter as would be readily apparent to one of ordinary skill in the art.

1. An adjustable thin film capacitor, adapted for adjusting theresulting capacitance value thereof while said capacitor is in operationin a circuit, comprising: respective first and second terminals; and acapacitor array, situated electrically between said respective first andsecond terminals, said capacitor array comprising a plurality ofrespectively valued sub-component capacitors, arranged so thatrespective of said sub-component capacitors may be removed from theresulting capacitance value of said adjustable thin film capacitor;wherein said sub-component capacitors comprise a base value capacitorand plural parallel coupled capacitors coupled by way of fusible links,and configured in a capacitive laddering effect, so that selectedremoval of respective said parallel coupled capacitors correspondinglyadjusts the resulting capacitance value of said thin film capacitor.2-3. (canceled)
 4. An adjustable thin film capacitor as in claim 1,wherein: said fusible links coupling the plurality of capacitors inparallel may be respectively ablated by laser irradiation; and said thinfilm capacitor further includes a laser radiation transparentpassivation layer covering at least said fusible links, whereby saidresulting capacitance value of said thin film capacitor may be adjustedwhile said thin film capacitor is in an intended use environment.
 5. Anadjustable thin film capacitor as in claim 1, wherein said fusible linksare situated such that no electrode of a respective sub-componentcapacitor lies either above or below a respective fusible link, so thatsubsequent ablation of any fusible link does not create potential shortsor leakages.
 6. An adjustable thin film capacitor as in claim 1, whereinsaid capacitive laddering configuration includes at least two respectivesingle capacitors of relatively larger capacitive values and a pluralityof substantially duplicative capacitors of at least two relatively lowercapacitive values.
 7. (canceled)
 8. An adjustable thin film capacitor asin claim 1, wherein: said fusible links may be respectively disrupted byablation with laser irradiation; and said thin film capacitor furtherincludes a laser radiation transparent passivation layer covering atleast said fusible links, whereby said resulting capacitance value ofsaid thin film capacitor may be adjusted while said thin film capacitoris in an intended use environment.
 9. (canceled)
 10. An in-situadjustable thin film capacitor, adapted for post production adjustmentof the resulting capacitance value thereof, comprising: respective firstand second terminals; and a capacitor array, situated electricallybetween said respective first and second terminals, said capacitor arraycomprising a base value capacitor and plural parallel coupled capacitorscoupled with at least one of said terminals by way of fusible links, andconfigured in a capacitive laddering effect, so that selected removal ofrespective said fusible links correspondingly removes parallel coupledcapacitors so as to adjust the resulting capacitance value of said thinfilm capacitor; wherein said fusible links are situated such that noelectrode of a respective capacitor of said capacitor array lies eitherabove or below a respective fusible link, so that subsequent disruptionof electrical connection of any fusible link does not create potentialshorts or leakages; and said capacitive laddering configuration includesat least one respective single capacitor of relatively larger capacitivevalue and a plurality of substantially duplicative capacitors of atleast two relatively lower capacitive values.
 11. An in-situ adjustablethin film capacitor as in claim 10, wherein: said fusible links couplingsaid plurality of capacitors in parallel may be respectively ablated bylaser irradiation; and said thin film capacitor further includes a laserradiation transparent passivation layer covering at least said fusiblelinks, whereby said resulting capacitance value of said thin filmcapacitor may be adjusted while said thin film capacitor is operative ina circuit.
 12. An in-situ adjustable thin film capacitor as in claim 10,wherein: said capacitive laddering configuration includes at least tworespective single capacitors having capacitive values respectively of atleast 1.0 pF; and said plurality of substantially duplicative capacitorsincludes at least ten of said capacitors having capacitive values ofrespectively no more than 0.5 pF. 13-33. (canceled)